DTA114TET1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 13275+ | 0.041 EUR |
| 100000+ | 0.034 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTA114TET1G ON Semiconductor
Description: TRANS PREBIAS PNP 50V 100MA SC75, Resistor - Base (R1): 10 kOhms, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-75, SOT-416, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA114TET1G nach Preis ab 0.034 EUR bis 0.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DTA114TET1G | Hersteller : ON Semiconductor |
 Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DTA114TET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
DTA114TET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 100MA SC75 Resistor - Base (R1): 10 kOhms Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-75, SOT-416 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DTA114TET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 100MA SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 10 kOhms |
auf Bestellung 10432 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DTA114TET1G | Hersteller : ON Semiconductor |
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP |
auf Bestellung 32524 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||
| DTA114TET1G | Hersteller : ON Semiconductor |
|
auf Bestellung 4750 Stücke: Lieferzeit 21-28 Tag (e) |