DTA114YMT2L Rohm Semiconductor
auf Bestellung 19530 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3534+ | 0.044 EUR |
| 3760+ | 0.04 EUR |
| 8000+ | 0.037 EUR |
| 16000+ | 0.034 EUR |
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Technische Details DTA114YMT2L Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA114YMT2L nach Preis ab 0.091 EUR bis 0.92 EUR
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DTA114YMT2L | Hersteller : Rohm Semiconductor |
 Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R |
auf Bestellung 1921 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5700 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA114YMT2L | Hersteller : ROHM Semiconductor |
Digital Transistors DGTL PNP 50V 70MA |
auf Bestellung 101551 Stücke: Lieferzeit 14-28 Tag (e) |
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DTA114YMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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