DTA115EMFHAT2L ROHM Semiconductor
auf Bestellung 8000 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.42 EUR |
| 1000+ | 0.40 EUR |
| 2500+ | 0.30 EUR |
| 8000+ | 0.09 EUR |
| 24000+ | 0.08 EUR |
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Technische Details DTA115EMFHAT2L ROHM Semiconductor
Description: PNP DIGITAL TRANSISTOR (CORRESPO, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: VMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Weitere Produktangebote DTA115EMFHAT2L nach Preis ab 0.13 EUR bis 0.15 EUR
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| DTA115EMFHAT2L | Hersteller : Rohm Semiconductor |
 Trans Digital BJT PNP 50V 100mA 150mW Automotive 3-Pin VMT T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA115EMFHAT2L | Hersteller : Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (CORRESPO Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
Produkt ist nicht verfügbar |
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DTA115EMFHAT2L | Hersteller : Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (CORRESPO Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
Produkt ist nicht verfügbar |