DTA115EU3T106 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 0.30 EUR |
| 93+ | 0.19 EUR |
| 151+ | 0.12 EUR |
| 500+ | 0.09 EUR |
| 1000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTA115EU3T106 Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Weitere Produktangebote DTA115EU3T106
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DTA115EU3T106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin UMT Tape |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
DTA115EU3T106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
Produkt ist nicht verfügbar |
|
 |
DTA115EU3T106 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP -50 VCEO -0.1A SOT-323 |
Produkt ist nicht verfügbar |