DTA123EEBTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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Technische Details DTA123EEBTL Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DTA123EEBTL nach Preis ab 0.061 EUR bis 0.061 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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DTA123EEBTL | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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DTA123EEBTL | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 83 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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DTA123EEBTL | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R |
auf Bestellung 1789 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1786 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTA123EEBTL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2841+ | 0.061 EUR |
| DTA123EEBTL |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| DTA123EEBTL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA123EEBTL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)