DTA123EKAT146 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Resistors Included: R1 and R2
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details DTA123EKAT146 Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Resistors Included: R1 and R2, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA123EKAT146 nach Preis ab 0.094 EUR bis 0.48 EUR
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DTA123EKAT146 | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R |
auf Bestellung 2195 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EKAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SMT3 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 |
auf Bestellung 5788 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EKAT146 | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R |
auf Bestellung 1186 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1163 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| DTA123EKAT146 | Rohm |
Транзистор PNP, Ptot,Вт = 0.2, VCEO,В = 50, Ic = 100 мА, Тип монт. = smd, ft,МГц = 250, hFE = 20 @ 20 мА, 5 В, VCEO(sat),В @ Ic, Ib = 0.3V @ 500 мкА, 10 мА, Тэксп, °С = -55...+150, R1 = 2.2 кОм, R2= 2.2 кОм,... Транзистори Корпус: SOT-346 Очікується: 500 Anzahl je Verpackung: 3000 Stücke |
verfügbar 2350 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| DTA123EKAT146 |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R
auf Bestellung 2195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 683+ | 0.25 EUR |
| 1108+ | 0.15 EUR |
| 1523+ | 0.11 EUR |
| 1749+ | 0.094 EUR |
| DTA123EKAT146 |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
auf Bestellung 5788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 72+ | 0.29 EUR |
| 116+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| DTA123EKAT146 |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA123EKAT146 |
|
Hersteller: Rohm
Транзистор PNP, Ptot,Вт = 0.2, VCEO,В = 50, Ic = 100 мА, Тип монт. = smd, ft,МГц = 250, hFE = 20 @ 20 мА, 5 В, VCEO(sat),В @ Ic, Ib = 0.3V @ 500 мкА, 10 мА, Тэксп, °С = -55...+150, R1 = 2.2 кОм, R2= 2.2 кОм,... Транзистори Корпус: SOT-346 Очікується: 500
Anzahl je Verpackung: 3000 Stücke
Транзистор PNP, Ptot,Вт = 0.2, VCEO,В = 50, Ic = 100 мА, Тип монт. = smd, ft,МГц = 250, hFE = 20 @ 20 мА, 5 В, VCEO(sat),В @ Ic, Ib = 0.3V @ 500 мкА, 10 мА, Тэксп, °С = -55...+150, R1 = 2.2 кОм, R2= 2.2 кОм,... Транзистори Корпус: SOT-346 Очікується: 500
Anzahl je Verpackung: 3000 Stücke
verfügbar 2350 Stücke: