DTA123EKAT146 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 1022+ | 0.14 EUR |
| 1393+ | 0.1 EUR |
| 1578+ | 0.089 EUR |
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Technische Details DTA123EKAT146 Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SMT3, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Resistors Included: R1 and R2, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA123EKAT146 nach Preis ab 0.072 EUR bis 0.41 EUR
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DTA123EKAT146 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP 50V 100MA |
auf Bestellung 1999 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EKAT146 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin SMT T/R |
auf Bestellung 1271 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTA123EKAT146 | Hersteller : Rohm |
Транзистор PNP, Ptot,Вт = 0.2, VCEO,В = 50, Ic = 100 мА, Тип монт. = smd, ft,МГц = 250, hFE = 20 @ 20 мА, 5 В, VCEO(sat),В @ Ic, Ib = 0.3V @ 500 мкА, 10 мА, Тэксп, °С = -55...+150, R1 = 2.2 кОм, R2= 2.2 кОм,... Група товару: Транзистори Корпус: SOT-346 ОAnzahl je Verpackung: 1 Stücke |
verfügbar 2350 Stücke: |
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| DTA123EKAT146 | Hersteller : Rohm |
TRANS PNP 50V 100MA SOT-346 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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DTA123EKAT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SMT3Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Resistors Included: R1 and R2 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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DTA123EKAT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SMT3Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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DTA123EKAT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 20 Frequency: 250MHz |
Produkt ist nicht verfügbar |


