DTA123EUAT106 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 1176+ | 0.12 EUR |
| 1608+ | 0.09 EUR |
| 3000+ | 0.064 EUR |
| 6000+ | 0.056 EUR |
| 9000+ | 0.052 EUR |
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Technische Details DTA123EUAT106 Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA123EUAT106 nach Preis ab 0.13 EUR bis 0.46 EUR
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DTA123EUAT106 | Hersteller : ROHM Semiconductor |
 Digital Transistors PNP 50V 100MA |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3 Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW |
auf Bestellung 917 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EUAT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 200mW 3-Pin UMT T/R |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTA123EUA T106 | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 818 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123EUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3 Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |