DTA123JCAT116 Rohm Semiconductor
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2359+ | 0.06 EUR |
| 2500+ | 0.06 EUR |
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Technische Details DTA123JCAT116 Rohm Semiconductor
Description: TRANS PREBIAS PNP 20V 0.1A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JCAT116 nach Preis ab 0.06 EUR bis 0.61 EUR
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DTA123JCAT116 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 20V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JCAT116 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP -100mA -50V w/bias resistor |
auf Bestellung 4643 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JCAT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 350mW 3-Pin SST T/R |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JCAT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 20V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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