DTA123JKAT146 Rohm Semiconductor
auf Bestellung 22070 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3206+ | 0.049 EUR |
| 3473+ | 0.043 EUR |
| 3572+ | 0.041 EUR |
| 6000+ | 0.038 EUR |
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Technische Details DTA123JKAT146 Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JKAT146 nach Preis ab 0.075 EUR bis 0.65 EUR
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DTA123JKAT146 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 200MW SMT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123JKAT146 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 3-Pin SMT T/R |
auf Bestellung 7800 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JKAT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5843 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123JKAT146 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DIGIT PNP 50V 100MA |
auf Bestellung 18065 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123JKAT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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DTA123JKAT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.2W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 |
Produkt ist nicht verfügbar |