DTA123JUAT106 Rohm Semiconductor
auf Bestellung 173429 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3704+ | 0.039 EUR |
| 4116+ | 0.034 EUR |
| 4274+ | 0.031 EUR |
| 6000+ | 0.029 EUR |
| 12000+ | 0.028 EUR |
| 24000+ | 0.025 EUR |
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Technische Details DTA123JUAT106 Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JUAT106 nach Preis ab 0.065 EUR bis 0.48 EUR
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DTA123JUAT106 | Hersteller : ROHM Semiconductor |
 Digital Transistors PNP 50V 100MA |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA123JUA T106 | Hersteller : ROHM | SOT-323 00+ |
auf Bestellung 72000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123JUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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