DTA123TM3T5G ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 7732+ | 0.068 EUR |
| 10000+ | 0.06 EUR |
| 100000+ | 0.049 EUR |
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Technische Details DTA123TM3T5G ON Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-723, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Bulk, Resistor - Base (R1): 2.2 kOhms, Power - Max: 260 mW.
Weitere Produktangebote DTA123TM3T5G nach Preis ab 0.06 EUR bis 0.082 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| DTA123TM3T5G | Sanyo |
 Description: SMALL SIGNAL BIPOLAR TRANSISTOR,Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-723 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Bulk Resistor - Base (R1): 2.2 kOhms Power - Max: 260 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| DTA123TM3T5G | Sanyo Electric |
DTA123TM3T5G |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| DTA123TM3T5G | ONSEMI |
Description: ONSEMI - DTA123TM3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| DTA123TM3T5G |
|
Hersteller: Sanyo
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Resistor - Base (R1): 2.2 kOhms
Power - Max: 260 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Resistor - Base (R1): 2.2 kOhms
Power - Max: 260 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9427+ | 0.063 EUR |
| DTA123TM3T5G |
|
Hersteller: Sanyo Electric
DTA123TM3T5G
DTA123TM3T5G
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7732+ | 0.068 EUR |
| 10000+ | 0.06 EUR |
| DTA123TM3T5G |
|
Hersteller: ONSEMI
Description: ONSEMI - DTA123TM3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - DTA123TM3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16000+ | 0.082 EUR |