DTA123YEFRATL ROHM Semiconductor
Hersteller: ROHM Semiconductor
Digital Transistors PNP, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
| Anzahl | Preis |
|---|---|
| 7+ | 0.44 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.099 EUR |
| 6000+ | 0.081 EUR |
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Technische Details DTA123YEFRATL ROHM Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: EMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA123YEFRATL nach Preis ab 0.19 EUR bis 0.67 EUR
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DTA123YEFRATL | Hersteller : Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
auf Bestellung 969 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA123YE FRATL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 2896 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA123YEFRATL | Hersteller : Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (AEC-Q101 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |