Technische Details DTA123YEBTL Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3F, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-85, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTA123YEBTL nach Preis ab 0.071 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DTA123YEBTL | ROHM Semiconductor |
Digital Transistors PNP -100mA; -50V EMT3F |
auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DTA123YEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DTA123YEBTL | Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTA123YEBTL |
![]() |
Hersteller: ROHM Semiconductor
Digital Transistors PNP -100mA; -50V EMT3F
Digital Transistors PNP -100mA; -50V EMT3F
auf Bestellung 674 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.45 EUR |
| 12+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.096 EUR |
| 3000+ | 0.08 EUR |
| 6000+ | 0.071 EUR |
| DTA123YEBTL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V UMT3F
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3F
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Cut Tape (CT)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 63+ | 0.33 EUR |
| 129+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.094 EUR |
| DTA123YEBTL |
![]() |
Hersteller: Rohm Semiconductor
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
Trans Digital BJT PNP 50V 0.1A 150mW 3-Pin EMTF T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)



