DTA123YEBTL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 8+ | 0.38 EUR |
| 12+ | 0.24 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.081 EUR |
| 3000+ | 0.067 EUR |
| 6000+ | 0.06 EUR |
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Technische Details DTA123YEBTL ROHM Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3F, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-85, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTA123YEBTL nach Preis ab 0.079 EUR bis 0.4 EUR
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DTA123YEBTL | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 50V UMT3FResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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