DTA143ESATP
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auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details DTA143ESATP
Description: TRANS PREBIAS PNP 300MW SPT, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote DTA143ESATP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DTA143ESATP | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 300MW SPT Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SPT DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA143ESATP | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased PNP 50V 100MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA143ESATP |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 300MW SPT
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PREBIAS PNP 300MW SPT
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143ESATP |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased PNP 50V 100MA
Bipolar Transistors - Pre-Biased PNP 50V 100MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH