DTA143EUBTL Rohm Semiconductor
auf Bestellung 8730 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5848+ | 0.027 EUR |
| 5883+ | 0.026 EUR |
| 6098+ | 0.024 EUR |
| 6135+ | 0.023 EUR |
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Technische Details DTA143EUBTL Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW UMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Supplier Device Package: UMT3F, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote DTA143EUBTL nach Preis ab 0.068 EUR bis 0.52 EUR
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DTA143EUBTL | Hersteller : Rohm Semiconductor |
 Trans Digital BJT PNP 50V 100mA 3-Pin UMTF T/R |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA143EUBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3F Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 2310 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTA143EUB TL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTA143EUBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
Produkt ist nicht verfügbar |
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DTA143EUBTL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased TRANSISTOR |
Produkt ist nicht verfügbar |