Produkte > ROHM SEMICONDUCTOR > DTA143XE3HZGTL
DTA143XE3HZGTL

DTA143XE3HZGTL Rohm Semiconductor


datasheet?p=DTA143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: EMT3
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DTA143XE3HZGTL Rohm Semiconductor

Description: TRANS PREBIAS PNP 50V 0.1A EMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: EMT3, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote DTA143XE3HZGTL nach Preis ab 0.083 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DTA143XE3HZGTL DTA143XE3HZGTL Hersteller : ROHM Semiconductor datasheet?p=DTA143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Digital Transistors PNP, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
auf Bestellung 5959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.45 EUR
11+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
3000+0.095 EUR
6000+0.083 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DTA143XE3HZGTL DTA143XE3HZGTL Hersteller : Rohm Semiconductor datasheet?p=DTA143XE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Part Status: Active
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH