Produkte > ROHM SEMICONDUCTOR > DTA143XU3HZGT106
DTA143XU3HZGT106

DTA143XU3HZGT106 Rohm Semiconductor

datasheet?p=DTA143XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: DTA143XU3HZG IS AN DIGITAL TRANS
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.55 EUR
100+0.29 EUR
500+0.19 EUR
1000+0.13 EUR
Mindestbestellmenge: 27
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Technische Details DTA143XU3HZGT106 Rohm Semiconductor

Description: DTA143XU3HZG IS AN DIGITAL TRANS, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).

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DTA143XU3HZGT106 DTA143XU3HZGT106 Hersteller : ROHM Semiconductor dta143xu3hzgt106-e-1872422.pdf Bipolar Transistors - Pre-Biased PNP -50V -0.1A 2.2kO SOT-323
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DTA143XU3HZGT106 DTA143XU3HZGT106 Hersteller : Rohm Semiconductor datasheet?p=DTA143XU3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA143XU3HZG IS AN DIGITAL TRANS
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH