DTB114EKT146 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details DTB114EKT146 Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTB114EKT146 nach Preis ab 0.18 EUR bis 0.9 EUR
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DTB114EKT146 | Hersteller : Rohm Semiconductor |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB114EKT146 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SMT T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB114EKT146 | Hersteller : ROHM Semiconductor |
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auf Bestellung 5934 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB114EKT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5916 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTB114EK T146 | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 1999 Stücke: Lieferzeit 21-28 Tag (e) |
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DTB114EKT146 | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 56 Power dissipation: 0.2W |
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