DTB543EMT2L Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 614+ | 0.29 EUR |
| 637+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.24 EUR |
| 5000+ | 0.23 EUR |
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Technische Details DTB543EMT2L Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A VMT3, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 260 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: VMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTB543EMT2L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DTB543EMT2L | Rohm Semiconductor |
 Description: TRANS PREBIAS PNP 12V 0.5A VMT3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DTB543EMT2L | ROHM Semiconductor |
Digital Transistors TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTB543EMT2L |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DTB543EMT2L |
|
Hersteller: ROHM Semiconductor
Digital Transistors TRANSISTOR
Digital Transistors TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH