DTC014TMT2L Rohm Semiconductor
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1356+ | 0.12 EUR |
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Technische Details DTC014TMT2L Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms.
Weitere Produktangebote DTC014TMT2L nach Preis ab 0.083 EUR bis 0.42 EUR
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DTC014TMT2L | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R |
auf Bestellung 4137 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC014TMT2L | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC014TMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 1478 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC014TMT2L | Hersteller : ROHM SEMICONDUCTOR |
DTC014TMT2L NPN SMD transistors |
Produkt ist nicht verfügbar |
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DTC014TMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
Produkt ist nicht verfügbar |
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DTC014TMT2L | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN Digital Transtr w/built in resistors |
Produkt ist nicht verfügbar |