DTC015EUBTL ROHM Semiconductor
auf Bestellung 2699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 0.40 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.11 EUR |
| 1000+ | 0.10 EUR |
| 3000+ | 0.06 EUR |
| 9000+ | 0.05 EUR |
| 24000+ | 0.05 EUR |
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Technische Details DTC015EUBTL ROHM Semiconductor
Description: TRANS PREBIAS NPN 50V 0.2W UMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: UMT3F, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Weitere Produktangebote DTC015EUBTL nach Preis ab 0.30 EUR bis 0.44 EUR
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DTC015EUBTL | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.2W UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC015EUBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.2W UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
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