DTC043EMT2L Rohm Semiconductor
auf Bestellung 103343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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2718+ | 0.057 EUR |
2916+ | 0.052 EUR |
2924+ | 0.05 EUR |
8000+ | 0.04 EUR |
16000+ | 0.037 EUR |
64000+ | 0.032 EUR |
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Technische Details DTC043EMT2L Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote DTC043EMT2L nach Preis ab 0.061 EUR bis 0.56 EUR
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DTC043EMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043EMT2L | Hersteller : Rohm Semiconductor | Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R |
auf Bestellung 10940 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC043EMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 14756 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043EMT2L | Hersteller : ROHM Semiconductor | Digital Transistors NPN Digital Transtr w/built in resistors |
auf Bestellung 33309 Stücke: Lieferzeit 14-28 Tag (e) |
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DTC043EMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Collector-emitter voltage: 50V Mounting: SMD Collector current: 0.1A Polarisation: bipolar Power dissipation: 0.15W Type of transistor: NPN Current gain: 20 Kind of transistor: BRT Base resistor: 4.7kΩ Frequency: 250MHz Base-emitter resistor: 4.7kΩ Kind of package: reel; tape Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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DTC043EMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Collector-emitter voltage: 50V Mounting: SMD Collector current: 0.1A Polarisation: bipolar Power dissipation: 0.15W Type of transistor: NPN Current gain: 20 Kind of transistor: BRT Base resistor: 4.7kΩ Frequency: 250MHz Base-emitter resistor: 4.7kΩ Kind of package: reel; tape |
Produkt ist nicht verfügbar |