DTC043TEBTL Rohm Semiconductor
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1520+ | 0.10 EUR |
| 2500+ | 0.09 EUR |
| 5000+ | 0.09 EUR |
| 10000+ | 0.08 EUR |
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Technische Details DTC043TEBTL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms.
Weitere Produktangebote DTC043TEBTL nach Preis ab 0.04 EUR bis 0.32 EUR
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DTC043TEBTL | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 1314 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043TEBTL | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN Digital Transtr w/built in resistors |
auf Bestellung 9914 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043TEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
Produkt ist nicht verfügbar |