DTC043XMT2L Rohm Semiconductor
auf Bestellung 5206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2284+ | 0.068 EUR |
| 2500+ | 0.064 EUR |
| 5000+ | 0.06 EUR |
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Technische Details DTC043XMT2L Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTC043XMT2L nach Preis ab 0.053 EUR bis 0.46 EUR
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DTC043XMT2L | Hersteller : ROHM Semiconductor |
 Digital Transistors NPN Digital transistor (with built-in resistors). These are the standard products of "digital transistors" which ROHM invented and marketed first in the world. |
auf Bestellung 3493 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043XMT2L | Hersteller : Rohm Semiconductor |
Description: NPN DIGITAL TRANSISTOR (WITH BUI Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 7732 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC043XMT2L | Hersteller : Rohm Semiconductor |
Description: NPN DIGITAL TRANSISTOR (WITH BUI Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |