DTC114TETL Rohm Semiconductor
auf Bestellung 3400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1846+ | 0.079 EUR |
| 2097+ | 0.067 EUR |
| 3000+ | 0.062 EUR |
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Technische Details DTC114TETL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote DTC114TETL nach Preis ab 0.086 EUR bis 0.49 EUR
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DTC114TETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114TETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin EMT T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114TETL | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 50V 100MA |
auf Bestellung 7059 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114TETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
auf Bestellung 3432 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC114TETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin EMT T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC114TE TL | Hersteller : ROHM | SOT23 |
auf Bestellung 2864 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC114TE-TL | Hersteller : ROHM | SOT423 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC114TETL | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Power dissipation: 0.15W Frequency: 250MHz Current gain: 100...600 |
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