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DTC114TUAT106

DTC114TUAT106 Rohm Semiconductor

dtc114tubtl-e.pdf Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
auf Bestellung 3869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2778+0.056 EUR
2786+ 0.054 EUR
3175+ 0.046 EUR
3323+ 0.042 EUR
Mindestbestellmenge: 2778
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Technische Details DTC114TUAT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms.

Weitere Produktangebote DTC114TUAT106 nach Preis ab 0.08 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DTC114TUAT106 DTC114TUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC114TUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.08 EUR
Mindestbestellmenge: 3000
DTC114TUAT106 DTC114TUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC114TUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 5965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
48+ 0.37 EUR
100+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.089 EUR
Mindestbestellmenge: 39
DTC114TUAT106 Hersteller : ROHM Semiconductor dtc114tuat106-e-1017910.pdf Bipolar Transistors - Pre-Biased NPN 50V 100MA SOT-323
auf Bestellung 2001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+0.32 EUR
10+ 0.3 EUR
100+ 0.17 EUR
500+ 0.1 EUR
Mindestbestellmenge: 9
DTC114TUA-T106 Hersteller : ROHM SOT423
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)