DTC115EEBTL ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 9+ | 0.33 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.086 EUR |
| 1000+ | 0.077 EUR |
| 3000+ | 0.07 EUR |
| 9000+ | 0.053 EUR |
| 24000+ | 0.049 EUR |
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Technische Details DTC115EEBTL ROHM Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: EMT3F (SOT-416FL), Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Weitere Produktangebote DTC115EEBTL nach Preis ab 0.089 EUR bis 0.37 EUR
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DTC115EEBTL | Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.1A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC115EEBTL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 0.37 EUR |
| 79+ | 0.23 EUR |
| 127+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.089 EUR |