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DTC115EET1

DTC115EET1 onsemi

DTC114EET1 Rev8.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 366000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.08 EUR
Mindestbestellmenge: 6662
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Technische Details DTC115EET1 onsemi

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.

Weitere Produktangebote DTC115EET1

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DTC115EET1 Hersteller : ON Semiconductor DTC114EET1 Rev8.pdf
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
DTC115EET1 Hersteller : ON DTC114EET1 Rev8.pdf 05+06+
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DTC115EET1 Hersteller : ONSEMI ONSMS22365-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - DTC115EET1 - DTC115EET1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 366000 Stücke:
Lieferzeit 14-21 Tag (e)
DTC115EET1 DTC115EET1 Hersteller : onsemi DTC114EET1 Rev8.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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