DTC115EET1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.069 EUR |
| 6000+ | 0.062 EUR |
| 9000+ | 0.058 EUR |
| 15000+ | 0.054 EUR |
| 21000+ | 0.051 EUR |
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Technische Details DTC115EET1G onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Resistor - Emitter Base (R2): 100 kOhms, Resistor - Base (R1): 100 kOhms, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SC-75, SOT-416, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC115EET1G nach Preis ab 0.044 EUR bis 0.36 EUR
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DTC115EET1G | onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 6754 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115EET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-75, SOT-416 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
auf Bestellung 25318 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC115EET1G | ON Semiconductor |
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auf Bestellung 7841 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DTC115EET1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 6754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.35 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.096 EUR |
| 1000+ | 0.083 EUR |
| 3000+ | 0.061 EUR |
| 9000+ | 0.048 EUR |
| 24000+ | 0.044 EUR |
| DTC115EET1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 25318 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 99+ | 0.21 EUR |
| 159+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.084 EUR |
| DTC115EET1G |
|
Hersteller: ON Semiconductor
auf Bestellung 7841 Stücke:
Lieferzeit 21-28 Tag (e)