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DTC115GU3HZGT106

DTC115GU3HZGT106 Rohm Semiconductor



Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DTC115GU3HZGT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Resistor - Emitter Base (R2): 100 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V.

Weitere Produktangebote DTC115GU3HZGT106 nach Preis ab 0.07 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DTC115GU3HZGT106 DTC115GU3HZGT106 Hersteller : ROHM Semiconductor Digital Transistors Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit withou
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.48 EUR
10+0.29 EUR
100+0.13 EUR
1000+0.12 EUR
3000+0.086 EUR
9000+0.074 EUR
24000+0.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DTC115GU3HZGT106 DTC115GU3HZGT106 Hersteller : Rohm Semiconductor Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH