DTC115GU3HZGT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.1 EUR |
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Technische Details DTC115GU3HZGT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Resistor - Emitter Base (R2): 100 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V.
Weitere Produktangebote DTC115GU3HZGT106 nach Preis ab 0.07 EUR bis 0.49 EUR
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DTC115GU3HZGT106 | ROHM Semiconductor | Digital Transistors Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit withou |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115GU3HZGT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Qualification: AEC-Q101 Resistor - Emitter Base (R2): 100 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DTC115GU3HZGT106 |
Hersteller: ROHM Semiconductor
Digital Transistors Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit withou
Digital Transistors Automotive NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) - DTC115GU3HZG is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit withou
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.086 EUR |
| 9000+ | 0.074 EUR |
| 24000+ | 0.07 EUR |
| DTC115GU3HZGT106 |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |