DTC115GUAT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 79+ | 0.27 EUR |
| 127+ | 0.17 EUR |
| 500+ | 0.12 EUR |
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Technische Details DTC115GUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 100 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA.
Weitere Produktangebote DTC115GUAT106
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DTC115GUAT106 | Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2174 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTC115GUAT106 |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)