DTC123EMFHAT2L ROHM Semiconductor
Hersteller: ROHM SemiconductorDigital Transistors Digital transistor (100mA-50V), Built-in bias resistor, NPN, 3-Pin
auf Bestellung 8000 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.42 EUR |
| 1000+ | 0.40 EUR |
| 2500+ | 0.30 EUR |
| 8000+ | 0.09 EUR |
| 24000+ | 0.08 EUR |
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Technische Details DTC123EMFHAT2L ROHM Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: VMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote DTC123EMFHAT2L nach Preis ab 0.07 EUR bis 0.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DTC123EMFHAT2L | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 150mW Automotive AEC-Q101 3-Pin VMT T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC123EMFHAT2L | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 150mW Automotive AEC-Q101 3-Pin VMT T/R |
auf Bestellung 6014 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EMFHAT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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DTC123EMFHAT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: VMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |