DTC123JETL Rohm Semiconductor
auf Bestellung 10287 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4256+ | 0.037 EUR |
| 4386+ | 0.034 EUR |
| 4445+ | 0.033 EUR |
| 6000+ | 0.031 EUR |
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Technische Details DTC123JETL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTC123JETL nach Preis ab 0.062 EUR bis 0.57 EUR
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DTC123JETL | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.1A EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123JETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin EMT T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123JETL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin EMT T/R |
auf Bestellung 16467 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123JETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 12632 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123JETL | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 50V 100MA SOT-416 |
auf Bestellung 8742 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123JE TL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 5223 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123JETL | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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| DTC123JETL | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |