DTC123JMHZGT2L Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
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Technische Details DTC123JMHZGT2L Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: VMT3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Qualification: AEC-Q101.
Weitere Produktangebote DTC123JMHZGT2L nach Preis ab 0.088 EUR bis 0.57 EUR
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DTC123JMHZGT2L | ROHM Semiconductor |
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101. |
auf Bestellung 7950 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123JMHZGT2L | Rohm Semiconductor |
DTC123JMHZGT2L |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTC123JMHZGT2L |
|
Hersteller: ROHM Semiconductor
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101.
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 7950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.57 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 5000+ | 0.1 EUR |
| 8000+ | 0.088 EUR |
| DTC123JMHZGT2L |
|
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| 60+ | 0.36 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
| DTC123JMHZGT2L |
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Hersteller: Rohm Semiconductor
DTC123JMHZGT2L
DTC123JMHZGT2L
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)