DTC123JMHZGT2L Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 8000+ | 0.065 EUR |
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Technische Details DTC123JMHZGT2L Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: VMT3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Qualification: AEC-Q101.
Weitere Produktangebote DTC123JMHZGT2L nach Preis ab 0.063 EUR bis 0.18 EUR
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DTC123JMHZGT2L | ROHM Semiconductor |
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101. |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123JMHZGT2L | Rohm Semiconductor |
DTC123JMHZGT2L |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DTC123JMHZGT2L |
![]() |
Hersteller: ROHM Semiconductor
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101.
Digital Transistors NPN, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 0.18 EUR |
| 26+ | 0.11 EUR |
| 100+ | 0.083 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.074 EUR |
| 2500+ | 0.07 EUR |
| 8000+ | 0.063 EUR |
| DTC123JMHZGT2L |
![]() |
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.18 EUR |
| 145+ | 0.12 EUR |
| 166+ | 0.11 EUR |
| 197+ | 0.089 EUR |
| 250+ | 0.081 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.073 EUR |
| 2500+ | 0.069 EUR |
| DTC123JMHZGT2L |
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Hersteller: Rohm Semiconductor
DTC123JMHZGT2L
DTC123JMHZGT2L
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
