DTC123JMT2L Rohm Semiconductor
auf Bestellung 73520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2778+ | 0.056 EUR |
| 2794+ | 0.054 EUR |
| 3031+ | 0.048 EUR |
| 8000+ | 0.043 EUR |
| 16000+ | 0.04 EUR |
| 64000+ | 0.035 EUR |
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Technische Details DTC123JMT2L Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTC123JMT2L nach Preis ab 0.11 EUR bis 0.8 EUR
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DTC123JMT2L | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC123JMT2L | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R |
auf Bestellung 2936 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123JMT2L | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123JMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 24889 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC123JMT2L | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DGTL NPN 50V 100MA |
auf Bestellung 7573 Stücke: Lieferzeit 14-28 Tag (e) |
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| DTC123JMT2L | Hersteller : ROHM |
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auf Bestellung 128000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123JMЎЎT2L | Hersteller : ROHM |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123JMT2L | Hersteller : ROHM |
2007 VMT3 |
auf Bestellung 7900 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123JMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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| DTC123JMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |