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DTC123JUBHZGTL

DTC123JUBHZGTL Rohm Semiconductor

UMT3_T106_taping.pdf Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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70+0.25 EUR
144+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
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Technische Details DTC123JUBHZGTL Rohm Semiconductor

Description: NPN DIGITAL TRANSISTOR (WITH BUI, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: UMT3F, Current - Collector (Ic) (Max): 100 mA, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

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DTC123JUBHZGTL DTC123JUBHZGTL Hersteller : Rohm Semiconductor UMT3_T106_taping.pdf Description: NPN DIGITAL TRANSISTOR (WITH BUI
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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DTC123JUBHZGTL DTC123JUBHZGTL Hersteller : ROHM Semiconductor UMT3_T106_taping.pdf Digital Transistors NPN SOT-323FL 2.2kO Input Resist
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