DTC123TCAT116 Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1405+ | 0.24 EUR |
| 2000+ | 0.14 EUR |
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Technische Details DTC123TCAT116 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote DTC123TCAT116 nach Preis ab 0.07 EUR bis 0.45 EUR
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DTC123TCAT116 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 50V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only |
auf Bestellung 2963 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123TCAT116 | Hersteller : ROHM Semiconductor |
Digital Transistors TRANS-SS NPN SOT23 50V |
auf Bestellung 8329 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123TCAT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 350mW 3-Pin SST T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123TCAT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only |
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