DTC123YETL Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 4831+ | 0.03 EUR |
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Technische Details DTC123YETL Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: EMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC123YETL nach Preis ab 0.11 EUR bis 0.79 EUR
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DTC123YETL | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 150mW 3-Pin EMT T/R |
auf Bestellung 1592 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123YETL | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 50V 100MA |
auf Bestellung 10687 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123YETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
auf Bestellung 2780 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123YE TL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 2776 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC123YETL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 150MW EMT3 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
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