DTC124EEBTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2359+ | 0.074 EUR |
| 2500+ | 0.07 EUR |
| 5000+ | 0.067 EUR |
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Technische Details DTC124EEBTL Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3F, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 30 mA, Part Status: Active, Supplier Device Package: EMT3F (SOT-416FL), DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC124EEBTL nach Preis ab 0.11 EUR bis 0.57 EUR
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DTC124EEBTL | Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 150MW EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EEBTL | Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin EMTF T/R |
auf Bestellung 424 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 424 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTC124EEBTL |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 150MW EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 1455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 0.57 EUR |
| 55+ | 0.38 EUR |
| 113+ | 0.19 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.11 EUR |
| DTC124EEBTL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin EMTF T/R
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin EMTF T/R
auf Bestellung 424 Stücke:
Lieferzeit 14-21 Tag (e)