DTC124EMFHAT2L Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 100mA 150mW Automotive AEC-Q101 3-Pin VMT T/R
| Anzahl | Preis |
|---|---|
| 1593+ | 0.091 EUR |
| 2500+ | 0.087 EUR |
| 5000+ | 0.083 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTC124EMFHAT2L Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: VMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC124EMFHAT2L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DTC124EMFHAT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DI Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
DTC124EMFHAT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DI Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DTC124EMFHAT2L | ROHM Semiconductor |
Digital Transistors NPN, SOT-723, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTC124EMFHAT2L |
|
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC124EMFHAT2L |
|
Hersteller: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC124EMFHAT2L |
|
Hersteller: ROHM Semiconductor
Digital Transistors NPN, SOT-723, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)
Digital Transistors NPN, SOT-723, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH