Technische Details DTC124ESATP ROHM
Description: TRANS PREBIAS NPN 50V 0.03A SPT, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 250 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 30 mA, Supplier Device Package: SPT, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: SC-72 Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote DTC124ESATP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DTC124ESATP | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.03A SPTResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 30 mA Supplier Device Package: SPT DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTC124ESATP | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN 50V 30MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DTC124ESA-TP | Micro Commercial Components (MCC) | Bipolar Transistors - Pre-Biased |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTC124ESATP |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.03A SPT
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PREBIAS NPN 50V 0.03A SPT
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 30 mA
Supplier Device Package: SPT
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC124ESATP |
![]() |
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased NPN 50V 30MA
Bipolar Transistors - Pre-Biased NPN 50V 30MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC124ESA-TP |
Hersteller: Micro Commercial Components (MCC)
Bipolar Transistors - Pre-Biased
Bipolar Transistors - Pre-Biased
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


