DTC124XEBTL Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1942+ | 0.08 EUR |
| 2208+ | 0.07 EUR |
| 3000+ | 0.06 EUR |
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Technische Details DTC124XEBTL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Supplier Device Package: EMT3F (SOT-416FL), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTC124XEBTL nach Preis ab 0.04 EUR bis 0.40 EUR
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DTC124XEBTL | Hersteller : ROHM Semiconductor |
 Digital Transistors NPN 100mA; 50V EMT3F |
auf Bestellung 6000 Stücke: Lieferzeit 136-140 Tag (e) |
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DTC124XEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 1515 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124XEBTL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1mA 150mW 3-Pin EMTF T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124XEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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