DTC124XEBTL Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 2740+ | 0.053 EUR |
| 2817+ | 0.051 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTC124XEBTL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: EMT3F (SOT-416FL), DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC124XEBTL nach Preis ab 0.06 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DTC124XEBTL | Hersteller : ROHM Semiconductor |
 Digital Transistors NPN 100mA; 50V EMT3F |
auf Bestellung 4759 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DTC124XEBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: EMT3F (SOT-416FL) DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 1515 Stücke: Lieferzeit 10-14 Tag (e) |
|