DTC125TUAT106 Rohm Semiconductor
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5051+ | 0.031 EUR |
| 5236+ | 0.029 EUR |
| 5292+ | 0.027 EUR |
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Technische Details DTC125TUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: UMT3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 200 kOhms.
Weitere Produktangebote DTC125TUAT106 nach Preis ab 0.073 EUR bis 0.61 EUR
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DTC125TUAT106 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC125TUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 200 kOhms |
auf Bestellung 2180 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC125TUAT106 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN 50V 100MA |
auf Bestellung 749 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC125TUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 200 kOhms |
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