DTC643TUT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 33+ | 0.65 EUR |
| 100+ | 0.44 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
27 Stücke
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Produktbewertung abgeben
Technische Details DTC643TUT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 150 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA.
Weitere Produktangebote DTC643TUT106
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DTC643TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DTC643TUT106 | ROHM Semiconductor |
Digital Transistors TRANS DIGI BJT NPN 20V 600MA 3PIN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DTC643TUT106 |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Description: TRANS PREBIAS NPN 200MW UMT3
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DTC643TUT106 |
|
Hersteller: ROHM Semiconductor
Digital Transistors TRANS DIGI BJT NPN 20V 600MA 3PIN
Digital Transistors TRANS DIGI BJT NPN 20V 600MA 3PIN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH