DTD143TKT146 Rohm Semiconductor
auf Bestellung 7573 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1119+ | 0.13 EUR |
| 1184+ | 0.12 EUR |
| 1223+ | 0.11 EUR |
| 2000+ | 0.10 EUR |
| 3000+ | 0.10 EUR |
| 6000+ | 0.09 EUR |
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Technische Details DTD143TKT146 Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: SMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms.
Weitere Produktangebote DTD143TKT146 nach Preis ab 0.16 EUR bis 0.72 EUR
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DTD143TKT146 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 40V 500mA 3-Pin SMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD143TKT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD143TKT146 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 50V 500MA |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD143TKT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 40V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
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