DTDG14GPDHZGT100 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: NPN, TO-243 (SOT-89), R2 ALONE T
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SOT-89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 40+ | 0.45 EUR |
| 100+ | 0.39 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.35 EUR |
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Technische Details DTDG14GPDHZGT100 Rohm Semiconductor
Description: NPN, TO-243 (SOT-89), R2 ALONE T, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V, Supplier Device Package: SOT-89, Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW, Frequency - Transition: 80 MHz, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote DTDG14GPDHZGT100 nach Preis ab 0.31 EUR bis 0.73 EUR
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DTDG14GPDHZGT100 | Hersteller : ROHM Semiconductor |
Digital Transistors DTDG14GPDHZG is a digital transistor (with built-in resistor and zener diode), suitable for driver. This is a high-reliability product of automotive grade qualified to AEC-Q101. |
auf Bestellung 698 Stücke: Lieferzeit 10-14 Tag (e) |
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DTDG14GPDHZGT100 | Hersteller : Rohm Semiconductor |
Description: NPN, TO-243 (SOT-89), R2 ALONE T Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: SOT-89 Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Frequency - Transition: 80 MHz Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
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