DXTC3C100PD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 100V POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
Frequency - Transition: 130MHz, 100MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
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Technische Details DXTC3C100PD-13 Diodes Incorporated
Description: TRANS NPN/PNP 100V POWERDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.47W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V, Frequency - Transition: 130MHz, 100MHz, Supplier Device Package: PowerDI5060-8 (Type UXD).
Weitere Produktangebote DXTC3C100PD-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DXTC3C100PD-13 | Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transistor PowerDI5060-8/SWP T&R 2.5K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DXTC3C100PD-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor PowerDI5060-8/SWP T&R 2.5K
Bipolar Transistors - BJT SS Low Sat Transistor PowerDI5060-8/SWP T&R 2.5K
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH