DXTN3C100PD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: PWR LOW SAT TRANSISTOR POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI5060-8 (Type UXD)
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
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Technische Details DXTN3C100PD-13 Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.47W, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 100V, Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V, Frequency - Transition: 130MHz, Supplier Device Package: PowerDI5060-8 (Type UXD).
Weitere Produktangebote DXTN3C100PD-13
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DXTN3C100PD-13 | Hersteller : Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.47W Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V Frequency - Transition: 130MHz Supplier Device Package: PowerDI5060-8 (Type UXD) |
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