DXTN58100CFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
| Anzahl | Preis |
|---|---|
| 20+ | 0.88 EUR |
| 24+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
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Technische Details DXTN58100CFDB-7 Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 690 mW.
Weitere Produktangebote DXTN58100CFDB-7 nach Preis ab 0.27 EUR bis 1.23 EUR
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DXTN58100CFDB-7 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transist |
auf Bestellung 2760 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN58100CFDB-7 | Hersteller : Diodes Incorporated |
Description: SS LOW SAT TRANSISTOR U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 690 mW |
Produkt ist nicht verfügbar |
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| DXTN58100CFDB-7 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 1.25W; U-DFN2020-3 Mounting: SMD Collector-emitter voltage: 100V Polarisation: bipolar Frequency: 150MHz Case: U-DFN2020-3 Type of transistor: NPN Power dissipation: 1.25W Collector current: 4A Pulsed collector current: 6A |
Produkt ist nicht verfügbar |