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DXTN58100CFDB-7

DXTN58100CFDB-7 Diodes Incorporated

DXTN58100CFDB.pdf Hersteller: Diodes Incorporated
Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
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24+0.74 EUR
100+0.51 EUR
500+0.40 EUR
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Technische Details DXTN58100CFDB-7 Diodes Incorporated

Description: SS LOW SAT TRANSISTOR U-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 690 mW.

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DXTN58100CFDB-7 DXTN58100CFDB-7 Hersteller : Diodes Incorporated DXTN58100CFDB.pdf Description: SS LOW SAT TRANSISTOR U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
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Im Einkaufswagen  Stück im Wert von  UAH