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DXTP5820CFDB-7

DXTP5820CFDB-7 Diodes Incorporated

DXTP5820CFDB.pdf Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 6A UDFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DXTP5820CFDB-7 Diodes Incorporated

Description: TRANS PNP 20V 6A UDFN2020-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 690 mW.

Weitere Produktangebote DXTP5820CFDB-7 nach Preis ab 0.21 EUR bis 1.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DXTP5820CFDB-7 DXTP5820CFDB-7 Hersteller : Diodes Incorporated DXTP5820CFDB.pdf Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
auf Bestellung 13835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.04 EUR
10+0.64 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.28 EUR
3000+0.23 EUR
6000+0.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DXTP5820CFDB-7 DXTP5820CFDB-7 Hersteller : Diodes Incorporated DXTP5820CFDB.pdf Description: TRANS PNP 20V 6A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 61630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH