DXTP5820CFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 6A UDFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
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Technische Details DXTP5820CFDB-7 Diodes Incorporated
Description: TRANS PNP 20V 6A UDFN2020-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 690 mW.
Weitere Produktangebote DXTP5820CFDB-7 nach Preis ab 0.21 EUR bis 1.04 EUR
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DXTP5820CFDB-7 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K |
auf Bestellung 13835 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTP5820CFDB-7 | Diodes Incorporated |
Description: TRANS PNP 20V 6A UDFN2020-3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: U-DFN2020-3 (Type B) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 690 mW |
auf Bestellung 61630 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DXTP5820CFDB-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
auf Bestellung 13835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.04 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.21 EUR |
| DXTP5820CFDB-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 6A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
Description: TRANS PNP 20V 6A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 690 mW
auf Bestellung 61630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |